| Citation: |
Zhao Desheng, Zhang Shuming, Zhu Jianjun, Zhao Degang, Duan Lihong, Zhang Baoshun, Yang Hui. Effect of Surface Treatment on P-GaN Ohmic Contact Property[J]. Journal of Semiconductors, 2007, In Press.
Zhao D S, Zhang S M, Zhu J J, Zhao D G, Duan L H, Zhang B S, Yang H. Effect of Surface Treatment on P-GaN Ohmic Contact Property[J]. Chin. J. Semicond., 2007, 28(S1): 545.
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Effect of Surface Treatment on P-GaN Ohmic Contact Property
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Abstract
The effect of the aqua regia solution on ohmic contact property of p-GaN is investigated.After aqua regia treat· ment the specific contact resistance of Au/Ni/p-OaN is improved from 8×10^13to 2.9×10^-4 Ω·cm2. With XPS measure· ment the concentration of oxide in the surface of GaN is obtained and it is obviously decreased due to aqua regia treatment。 So We can suggest that aqua regia is effective in removing the surface oxides and as a result the p-GaN ohmic contact property is improved. -
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