Chin. J. Semicond. > 1984, Volume 5 > Issue 4 > 443-448

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用MOS恒定电荷法测定半导体少子的体产生寿命及表面产生速度

谭长华 and 许铭真

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1984

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      • Received Date: 2015-08-20

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