| Citation: |
Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, Xing Xiaodong, Qu Shengchun, Wang Zhanguo. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, In Press.
Pi B, Shu Y C, Lin Y W, Xu B, Yao J H, Xing X D, Qu S C, Wang Z G. Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(S1): 28.
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Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy
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Abstract
The surface morphologies of InP epilayers grown by solid source molecular beam epitaxy at different growth temperatures and P/In flux ratios have been systematically studied by atomic force microscopy (AFM). The results show that the remarkable variety of surface morphologies of samples is related to the transition of growth mode。Under a critical growth condition，a transition of growth mode is induced between a two-dimensional (2D) growth mode and a three-dimensional (3D) growth mode.On the basis of these results，a summary phase diagram is proposed for the growth mode of InP epilayers.Under the 2D growth region，high quality InP epilayers are obtained.-
Keywords:
- SSMBE,
- InP,
- growth mode
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References
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Proportional views
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