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Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

Chen Hongda, Gao Peng, Mao Luhong and Huang Jiale

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Abstract: A monolithically integrated optoelectronic receiver is presented.A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging.Implemented in the present deep sub-micron MS/RF (mixed signal,radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Key words: monolithically integratedOEICCMOS process

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Chen Hongda, Gao Peng, Mao Luhong, Huang Jiale. Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS[J]. Journal of Semiconductors, 2006, In Press. Chen H D, Gao P, Mao L H, Huang J L. Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS[J]. Chin. J. Semicond., 2006, 27(2): 323.Export: BibTex EndNote
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      Chen Hongda, Gao Peng, Mao Luhong, Huang Jiale. Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS[J]. Journal of Semiconductors, 2006, In Press.

      Chen H D, Gao P, Mao L H, Huang J L. Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS[J]. Chin. J. Semicond., 2006, 27(2): 323.
      Export: BibTex EndNote

      Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

      • Received Date: 2015-08-20

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