Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 33-36
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Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire

Zhang Wei, Hao Qiuyan, Jing Weina, Liu Caichi and Feng Yuchun

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Abstract: The effect of growth conditions on GaN layer growth in the epitaxial lateral overgrowth (ELO) process by metal organic chemical vapor deposition(MOCVD)was investigated.Sapphire wafer was used as the substrate，which was chemically etched to make pattern on it.Then a GaN buffer layer was deposited at low temperature (LT) as the seeding layet to alleviate the lattice mismatch and difference in thermal conductivity between GaN and the substrate to grow a high quality layer with a low density of screw and mixed threading dislocations.Finally the GaN epilayer was deposited on the seeding layer by EL0. The properties of the GaN layer were then investigated by double.crystal X.ray diffraction，atomic force microscopy，and wet chemical etching.

Key words: GaN, epitaxial lateral overgrowth, MOCVD, c-plane(0001) sapphire substrate

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 33-36
      Zhang Wei, Hao Qiuyan, Jing Weina, Liu Caichi, Feng Yuchun. Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire[J]. Journal of Semiconductors, 2007, In Press. Zhang W, Hao Q Y, Jing W N, Liu C C, Feng Y C. Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire[J]. Chin. J. Semicond., 2007, 28(S1): 33.Export: BibTex EndNote
      Citation:
      Zhang Wei, Hao Qiuyan, Jing Weina, Liu Caichi, Feng Yuchun. Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire[J]. Journal of Semiconductors, 2007, In Press.

      Zhang W, Hao Q Y, Jing W N, Liu C C, Feng Y C. Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire[J]. Chin. J. Semicond., 2007, 28(S1): 33.
      Export: BibTex EndNote
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      Epitaxial Lateral Overgrowth of Gallium Nitride on Sapphire

      • Information Function Institute，Hebei University of Technology，Tianjin 300130，China

      • Key Laboratory of Photoelectronics Devices and Systerns of Guangdong Province and the Ministry of Education，Shenzhen University，Shenzhen 518060，China,Information Function Institute，Hebei University of Technology，Tia町in 300130，China),Information Function Institute，Hebei University of Technology，Tianjin 300130，China

      • Key Laboratory of Photoelectronics Devices and Systerns of Guangdong Province and the Ministry of Education，Shenzhen University，Shenzhen 518060，China,Information Function Institute，Hebei University of Technology，Tia町in 300130，China) and Key Laboratory of Photoelectronics Devices and Systerns of Guangdong Province and the Ministry of Education，Shenzhen University，Shenzhen 518060，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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