Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 419-421

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1mm SiC Multi-Finger Gate Microwave Power Device

Chen Gang, Qian Wei, Chen Bin and Bai Song

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Abstract: We report our research on 1mm multi-finger gate 4H-SiC metal-semiconductor field-effect transistors (MESFETs). We design our own device process to fabricate n-channel 4H-SiC MESFETs with 100μm single gate,1mm total gate periphery,0.8μm gate length. The RF characteristics are studied. At fo=2GHz,Vds=30V,the maximum output power is measured to be 1.14W,with a gain of 4.58dB,power added efficiency 19%, and drain efficiency 28.7%.

Key words: 4H-SiC MESFET microwave wide band semiconductor

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Chen Gang, Qian Wei, Chen Bin, Bai Song. 1mm SiC Multi-Finger Gate Microwave Power Device[J]. Journal of Semiconductors, 2006, In Press. Chen G, Qian W, Chen B, Bai S. 1mm SiC Multi-Finger Gate Microwave Power Device[J]. Chin. J. Semicond., 2006, 27(13): 419.Export: BibTex EndNote
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      Chen Gang, Qian Wei, Chen Bin, Bai Song. 1mm SiC Multi-Finger Gate Microwave Power Device[J]. Journal of Semiconductors, 2006, In Press.

      Chen G, Qian W, Chen B, Bai S. 1mm SiC Multi-Finger Gate Microwave Power Device[J]. Chin. J. Semicond., 2006, 27(13): 419.
      Export: BibTex EndNote

      1mm SiC Multi-Finger Gate Microwave Power Device

      • Received Date: 2015-08-20

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