Abstract: The growth characteristics during metalorganic chemical vapor deposition and optical properties of ZnO films on sapphire (Al2O3) (0001) and (1120) substrates are studied.For the former,the effects of two important growth parameters,i.e.temperature and pressure,are investigated in detail.Due to the large lattice mismatch between the film and the substrate,ZnO nanocrystals are usually obtained.The growth behavior at the film-substrate interface is found to be strongly dependent on the growth temperature,while the growth pressure determines the shape of the nanostructures as they grow.It is difficult to obtain ZnO films that have good quality and a smooth surface simultaneously.Due to the smaller lattice mismatch,the critical thickness of ZnO on the Al2O3 (1120) surface is found to be much larger than that on the Al2O3 (0001) surface.ZnO/MgZnO quantum wells with graded well thicknesses are grown on the Al2O3 (1120) surfaces,and their optical properties are studied.The built-in electric field in the well layer,generated by the piezoelectric effect,is estimated to be 3E5V/cm.It is found that growth at low temperatures and low pressures may facilitate the incorporation of acceptor impurities in ZnO.

Key words: ZnO, thin films, quantum well, MOCVD, growth temperature, doping