| Citation: |
Xu Qingqing, Chen Xinqiang, Wei Yanfeng, Yang Jianrong, Chen Lu. LPE Growth and Characterization of HgCdTe on Si Based Substrate[J]. Journal of Semiconductors, 2007, In Press.
Xu Q Q, Chen X Q, Wei Y F, Yang J R, Chen L. LPE Growth and Characterization of HgCdTe on Si Based Substrate[J]. Chin. J. Semicond., 2007, 28(7): 1078.
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LPE Growth and Characterization of HgCdTe on Si Based Substrate
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Abstract
HgCdTe epilayer grown on(211)Si/CdTe compound substrate was first obtained by a novel liquid-phase epitaxy technique.The etch pit density of the layer is about (5~8)e5cm-2,which is lower than that grown by MBE.The FWHM of the X-ray rocking curve of the epilayer can be better than 70" .The control level of composition and thickness of the epilayer is the same as that of the HgCdTe routine LPE technique on (111) CdZnTe substrate.But the density of surface defects on (211) HgCdTe layer is higher than that of epilayer grown on (111) CdZnTe substrate at present.The result indicates that (211) Si-based HgCdTe LPE can play an important role in growing low etch pit density Si-based HgCdTe materials used for the fabrication of longwave infrared focal plane arrays.-
Keywords:
- Si/CdTe compound substrate,
- HgCdTe,
- LPE
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References
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