Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 290-295
|

CONTENTS

开态热载流子应力下的n-MOSFETs的氧化层厚度效应(英文)

胡靖 , 穆甫臣 , 许铭真 and 谭长华

+ Author Affiliations

PDF

Key words: HCI, 热载流子效应, 氧化层厚度效应, 寿命预测模型, 器件可靠性

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 2651 Times PDF downloads: 715 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 290-295
      Export: BibTex EndNote
      Citation:


      Export: BibTex EndNote
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return