Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 455-459

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Abstract: A new method for determining proximity parameters α,β,and η in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography[J]. Journal of Semiconductors, 2005, In Press. A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography[J]. Chin. J. Semicond., 2005, 26(3): 455.Export: BibTex EndNote
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      A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography[J]. Journal of Semiconductors, 2005, In Press.

      A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography[J]. Chin. J. Semicond., 2005, 26(3): 455.
      Export: BibTex EndNote

      A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography

      • Received Date: 2015-08-19

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