J. Semicond. > 2008, Volume 29 > Issue 7 > 1268-1273

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High-Voltage MOSFETs in a 0.5μm CMOS Process

Zhao Wenbin, Li Leilei and Yu Zongguang

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Abstract: There is growing interest in developing high-voltage MOSFET devices that can be integrated with low-voltage CMOS digital and analog circuits.In this paper,high-voltage n- and p-type MOSFETs are fabricated in a commercial 3.3/5V 0.5μm n-well CMOS process without adding any process steps using n-well and p-channel stops.High current and high-voltage transistors with breakdown voltages between 23 and 35V for the nMOS transistors with different layout parameters and 19V for the pMOS transistors are achieved.This paper also presents the insulation technology and characterization results for these high-voltage devices.

Key words: high-voltage MOSFET low-voltage MOSFET0.5μm CMOS processembedded manufacture technology

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    Received: 18 August 2015 Revised: 24 March 2008 Online: Published: 01 July 2008

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      Zhao Wenbin, Li Leilei, Yu Zongguang. High-Voltage MOSFETs in a 0.5μm CMOS Process[J]. Journal of Semiconductors, 2008, In Press. Zhao W B, Li L L, Yu Z G. High-Voltage MOSFETs in a 0.5μm CMOS Process[J]. J. Semicond., 2008, 29(7): 1268.Export: BibTex EndNote
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      Zhao Wenbin, Li Leilei, Yu Zongguang. High-Voltage MOSFETs in a 0.5μm CMOS Process[J]. Journal of Semiconductors, 2008, In Press.

      Zhao W B, Li L L, Yu Z G. High-Voltage MOSFETs in a 0.5μm CMOS Process[J]. J. Semicond., 2008, 29(7): 1268.
      Export: BibTex EndNote

      High-Voltage MOSFETs in a 0.5μm CMOS Process

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-26
      • Revised Date: 2008-03-24
      • Published Date: 2008-08-01

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