| Citation: |
Guo Weilian, Zhang Shilin, Liang Huilai, Qi Haitao, Mao Luhong, Niu Pingjuan, Yu Xin, Wang Wei, Wang Wenxin, Chen Hong, Zhou Junming. Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors[J]. Journal of Semiconductors, 2008, In Press.
Guo W L, Zhang S L, Liang H L, Qi H T, Mao L H, Niu P J, Yu X, Wang W, Wang W X, Chen H, Zhou J M. Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors[J]. J. Semicond., 2008, 29(1): 136.
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Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors
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Abstract
By adopting a dual channel structure and a GaAs substrate,a real space transfer transistor is successfully designed and fabricated.It has the standard "Λ" shaped negative resistance I-V characteristics as well as the level and smooth valley region of a conventional RSTT.The negative resistance parameters can be varied by changing the gate voltage.For example,the PVCR varies from 2.1 to 10.6V while VGS changes from 0.6 to 1.0V.The transconductance for IP (ΔIP/ΔVGS) is 0.3mS.The parameters VP and VV,and the threshold gate voltage for negative resistance characteristics are smaller than the values reported in the literatures.This device is suitable for low dissipation power application. -
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