Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 283-289

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Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs

Gao Jinxia, Zhang Yimen and Zhang Yuming

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Abstract: The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect mobility is proposed.A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.The dependence of the peak field-effect mobility on series resistance follows a simple quadratic polynomial.The effects of uniform and exponential interface state distributions in the forbidden band on field-effect mobility are analyzed with an analytical model.The effects of non-uniform interface states can be ignored at lower gate voltages but become more obvious as the gate bias increases.

Key words: 4H-SiCburied-channelMOSFETmobilityseries resistanceinterface states

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Gao Jinxia, Zhang Yimen, Zhang Yuming. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Journal of Semiconductors, 2006, In Press. Gao J X, Zhang Y M, Zhang Y M. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Chin. J. Semicond., 2006, 27(2): 283.Export: BibTex EndNote
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      Gao Jinxia, Zhang Yimen, Zhang Yuming. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Journal of Semiconductors, 2006, In Press.

      Gao J X, Zhang Y M, Zhang Y M. Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs[J]. Chin. J. Semicond., 2006, 27(2): 283.
      Export: BibTex EndNote

      Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs

      • Received Date: 2015-08-20

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