| Citation: |
Deng Jinxiang, Chen Hao, Liu Junkai, Tian Ling, Zhang Yan, Zhou Tao, He Bin, Chen Guanghua, Wang Bo, Yan Hui. Deposition and Ion Implantation of Boron Nitride Film[J]. Journal of Semiconductors, 2006, In Press.
Deng J X, Chen H, Liu J K, Tian L, Zhang Y, Zhou T, He B, Chen G H, Wang B, Yan H. Deposition and Ion Implantation of Boron Nitride Film[J]. Chin. J. Semicond., 2006, 27(13): 127.
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Deposition and Ion Implantation of Boron Nitride Film
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Abstract
The sulfur doping of boron nitride films usually adopts an in-situ doping control technique during their deposition processes.In this paper the sulfur doping of boron nitride films is realized through ion implantation.Experiment results show that the boron nitride films of sulfur ion implantation are n-type.The resistivity of the boron nitride films decrease with increasing sulfur ion implantation dose.Annealing of the implanted boron nitride films results in increasing their doping effect.The resistivity of the film implanted at the dose of 1E16cm-2 and annealed at 600℃ for 60min is 2.20E5Ω·cm,which is 6 orders lower than that of the un-implanted film.-
Keywords:
- boron nitride film,
- n-type doping,
- ion implantation
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References
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Proportional views
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