| Citation: |
Wu Xiaoshuai, Yang Ruixia, Yan Deli, Liu Yuewei, Jia Kejin, He Dawei, Yang Kewu. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Journal of Semiconductors, 2007, In Press.
Wu X S, Yang R X, Yan D L, Liu Y W, Jia K J, He D W, Yang K W. 13.7～14.5GHz Internally-Matched GaAs High Power Device[J]. Chin. J. Semicond., 2007, 28(7): 1104.
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13.7～14.5GHz Internally-Matched GaAs High Power Device
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Abstract
A 19.2mm gate-width GaAs power HFET has been fabricated with improvements in the technology of device structure and passivation.The internally-matched device with two chips yields an output power greater than 42dBm(158W) with more than 7dB power gain,more than 35% PAE,and more than 90% co-efficiency across the band of 13.7～14.5GHz with Vds=9V and Pin=35dBm.At 14.3GHz,an output power of 42.54dBm (17.9W) and power gain of 7.54dB were achieved.-
Keywords:
- device,
- internally matching,
- HFET,
- power combination
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References
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Proportional views
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