Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 136-139

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Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer

Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua and Wang Qiming

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Abstract: The rapid thermal annealing characteristics of the Ge/Si(001) multilayer nano-islands material are investigated by X-ray diffraction and photoluminescence measurements.It is found that the thermal activated Ge/Si atom interdiffusion in nano-island region is much stronger than that in wetting layer.And the interdiffusion becomes stronger;the crystal quality begins deteriorating when the annealing time is larger.If the material is annealed at 800℃ for about 10s,Ge/Si atom interdiffusion is relatively small and the crystal quality keeps good.Meanwhile,it can activate over 50% of the impurities which are implanted by ion beams

Key words: SiGenano-islandannealingion implant

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua, Wang Qiming. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Journal of Semiconductors, 2006, In Press. Shi W H, Luo L P, Zhao L, Zuo Y H, Wang Q M. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Chin. J. Semicond., 2006, 27(13): 136.Export: BibTex EndNote
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      Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua, Wang Qiming. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Journal of Semiconductors, 2006, In Press.

      Shi W H, Luo L P, Zhao L, Zuo Y H, Wang Q M. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Chin. J. Semicond., 2006, 27(13): 136.
      Export: BibTex EndNote

      Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer

      • Received Date: 2015-08-20

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