Chin. J. Semicond. > 2007, Volume 28 > Issue 7 > 1092-1096
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Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface

Guo Jing, Guo Xia, Liang Ting, Gu Xiaoling, Lin Qiaoming and Shen Guangdi

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Abstract: Bonding of GaAs/GaN was successfully achieved at 600℃ in N2 atmosphere for 1h,with two different chemical pretreatments of hydrophilic and hydrophobic processes.Both methods can achieve high bonding strength and large bonding area.Based on the mechanics of the two different pretreatments,the transmittance of the bonding interface with different pretreatments was studied.Results of the transmission spectrum indicate that the hydrophobic process can yield a higher transmittance of 94.7% at 630nm.Devices were fabricated to execute the EL spectrum measurement,the results of which are consistent with the transmission spectrum.

Key words: bonding, hydrophilic, hydrophobic, GaAs/GaN

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    Received: 18 August 2015 Revised: 07 March 2007 Online: Published: 01 July 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(7): 1092-1096
      Guo Jing, Guo Xia, Liang Ting, Gu Xiaoling, Lin Qiaoming, Shen Guangdi. Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface[J]. Journal of Semiconductors, 2007, In Press. Guo J, Guo X, Liang T, Gu X L, Lin Q M, Shen G D. Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface[J]. Chin. J. Semicond., 2007, 28(7): 1092.Export: BibTex EndNote
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      Guo Jing, Guo Xia, Liang Ting, Gu Xiaoling, Lin Qiaoming, Shen Guangdi. Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface[J]. Journal of Semiconductors, 2007, In Press.

      Guo J, Guo X, Liang T, Gu X L, Lin Q M, Shen G D. Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface[J]. Chin. J. Semicond., 2007, 28(7): 1092.
      Export: BibTex EndNote
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      Effect of Hydrophilic and Hydrophobic Processes on the Transmittance of a GaAs/GaN Bonding Interface

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Beijing Optoelectronic Technology Laboratory,Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing 100022,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-01-09
      • Revised Date: 2007-03-07
      • Published Date: 2007-07-05

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