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Key words: 全耗尽CMOS/SOI工艺, 氮化H2-O2合成薄栅氧, 双栅, 注Ge硅化物
Article views: 2576 Times PDF downloads: 1380 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 January 2003
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