| Citation: |
Tong Zhaomin, Xue Chenyang, Lin Yijie, Chen Shang. Mechanic-Electric Coupling Characteristics of a Resonant Tunneling Diode[J]. Journal of Semiconductors, 2008, In Press.
Tong Z M, Xue C Y, Lin Y J, Chen S. Mechanic-Electric Coupling Characteristics of a Resonant Tunneling Diode[J]. J. Semicond., 2008, 29(10): 1907.
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Mechanic-Electric Coupling Characteristics of a Resonant Tunneling Diode
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Abstract
This paper reports the piezoresistive effect of a resonant tunneling diode (RTD) in a microstructure.The four-beam structure is analyzed and fabricated by positing RTDs at the stress sensitive regions.Stress along the ［110］ orientation and ［110］ orientation induces a change in the RTD’s current-voltage (I-V) curves,i.e.,the meso-piezoresistance variety,mainly in its negative different resistance (NDR) region.By different methods,the mechanic-electric coupling characteristic of RTD is studied and the consistent 1E-9Pa-1 piezoresistive coefficients are discovered.-
Keywords:
- piezoresistive effect,
- RTD,
- NDR,
- mechanic-electric coupling
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References
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