Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 452-456

Reservoir Effect in Multi-Layer Metal System

Guo Chunsheng, Li Xiuyu, Li Zhiguo and Wu Yuehua

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Abstract: Metal iron reservoirs in multi·layer metal system with W via have great effects on the electro-migration lifetime. In this study,the sample with different reservoir structure was designed for the electro-migration test.The effect of reservoir area,via displace,amount and size on electro-migration lifetime was concluded·and reservoir area play a significant role a- mong all factors.

Key words: interconnectsreservoir effectelectro-migration

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Guo Chunsheng, Li Xiuyu, Li Zhiguo, Wu Yuehua. Reservoir Effect in Multi-Layer Metal System[J]. Journal of Semiconductors, 2007, In Press. Guo C S, Li X Y, Li Z G, Wu Y H. Reservoir Effect in Multi-Layer Metal System[J]. Chin. J. Semicond., 2007, 28(S1): 452.Export: BibTex EndNote
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      Guo Chunsheng, Li Xiuyu, Li Zhiguo, Wu Yuehua. Reservoir Effect in Multi-Layer Metal System[J]. Journal of Semiconductors, 2007, In Press.

      Guo C S, Li X Y, Li Z G, Wu Y H. Reservoir Effect in Multi-Layer Metal System[J]. Chin. J. Semicond., 2007, 28(S1): 452.
      Export: BibTex EndNote

      Reservoir Effect in Multi-Layer Metal System

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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