| Citation: |
Yu Mengxia, Li Aibin, Xu Jun. A Ka-Band PHEMT MMIC 1W Power Amplifier[J]. Journal of Semiconductors, 2007, In Press.
Yu M X, Li A B, Xu J. A Ka-Band PHEMT MMIC 1W Power Amplifier[J]. Chin. J. Semicond., 2007, 28(10): 1513.
Export: BibTex EndNote
|
A Ka-Band PHEMT MMIC 1W Power Amplifier
-
Abstract
The performance of a microwave monolithic integrated circuit (MMIC) amplifier with high output power in the Ka-band is presented.Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute,this three-stage power amplifier,with a chip size of 19.25mm2(3.5mm×5.5mm),on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32.5～35.5GHz frequency range,with an average output power at 1dB gain compression of P1dB=29.8dBm and a maximum saturated output power of Psat=31dBm.-
Keywords:
- Ka-band,
- power amplifier,
- PHEMT,
- MMIC
-
References
-
Proportional views
DownLoad: