Chin. J. Semicond. > 1994, Volume 15 > Issue 12 > 850-857

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基区非均匀掺杂对AlGaAs/GaAs HBT电学特性影响的数值分析

曾峥,吴文刚,罗晋生

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Abstract:

基于异质结漂移-扩散模型,考虑Fermi-Dirac统计和重掺杂能带窄变(BGN)效应,对具有非均匀掺杂基区的AlGaAs/GaAsHBT进行了数值模拟.结果表明,当基区非均匀程度较大时,非均匀掺杂引起的基区自建场远大于BGN效应产生的反向场.基区非均匀掺杂能提高电流增益,但提高的幅度随非均匀程度的增加而减慢.基区非均匀掺杂可明显改善截止频率f,但同时也增加了集电结空间电荷区渡越时间τ,scR,使得f在非均匀程度较大时开始下降.发射极-集电极offset电压在一定的非均匀程度下达到最佳值.

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1994

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      • Received Date: 2015-08-19

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