Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 467-470
|

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。

Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng and Cao Chunfang

+ Author Affiliations

PDF

Abstract: To investigate the influence of dry etching on the luminescence characteristic of strained multiple quantum wells， InAsP/InGaAsP multiple quantum wells are grown using gas source molecular epitaxy (GSMBE). It was found that after dry etching a certain depth of the cap layer of the multiple quantum well structure，the PL intensity of the quantum well is enhanced greatly. It was caused by rough surface and microstructure change after dry etching.

Key words: etching, strained multiple quantum wells, PL spectra, damage

    • Search

    Advanced Search >>

    Article Metrics

    Article views: 1922 Times PDF downloads: 313 Times Cited by: 0 Times

    History

    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 467-470
      Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, Cao Chunfang. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Journal of Semiconductors, 2007, In Press. Cao M, Wu H Z, Lao Y F, Liu C, Xie Z S, Cao C F. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Chin. J. Semicond., 2007, 28(S1): 467.Export: BibTex EndNote
      Citation:
      Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, Cao Chunfang. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Journal of Semiconductors, 2007, In Press.

      Cao M, Wu H Z, Lao Y F, Liu C, Xie Z S, Cao C F. Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。[J]. Chin. J. Semicond., 2007, 28(S1): 467.
      Export: BibTex EndNote
      shu

      Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。

      • State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China,State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China and State Key Laboratory of Functional Materials for Informaties，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

      • Graduate School of the Chinese Academy of Sciences，Beijing 100039，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return