Chin. J. Semicond. > 2007, Volume 28 > Issue 2 > 182-188

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A Fully Integrated CMOS Readout Circuit for Particle Detectors

Zhang Yacong, Chen Zhongjian, Lu Wengao, Zhao Baoying and Ji Lijiu

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Abstract: Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented.The CSA is designed with poly-resistors as feedback components to reduce noise.Compared with conventional CSA,the input referred equivalent noise charge(ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss.The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.

Key words: charge sensitive amplifiershaperreadout circuitnoise optimization

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    Received: 18 August 2015 Revised: 31 August 2006 Online: Published: 01 February 2007

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      Zhang Yacong, Chen Zhongjian, Lu Wengao, Zhao Baoying, Ji Lijiu. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Journal of Semiconductors, 2007, In Press. Zhang Y C, Chen Z J, Lu W G, Zhao B Y, Ji L J. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Chin. J. Semicond., 2007, 28(2): 182.Export: BibTex EndNote
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      Zhang Yacong, Chen Zhongjian, Lu Wengao, Zhao Baoying, Ji Lijiu. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Journal of Semiconductors, 2007, In Press.

      Zhang Y C, Chen Z J, Lu W G, Zhao B Y, Ji L J. A Fully Integrated CMOS Readout Circuit for Particle Detectors[J]. Chin. J. Semicond., 2007, 28(2): 182.
      Export: BibTex EndNote

      A Fully Integrated CMOS Readout Circuit for Particle Detectors

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-19
      • Revised Date: 2006-08-31
      • Published Date: 2007-01-30

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