0.1μｍ槽栅CMOS器件及相关特性

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0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, In Press. 0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.Export: BibTex EndNote

Citation:

0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, In Press.

0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.

Export: BibTex EndNote

0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, In Press. 0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.Export: BibTex EndNote

Citation:

0.1μｍ槽栅CMOS器件及相关特性[J]. Journal of Semiconductors, 2005, In Press.

0.1μｍ槽栅CMOS器件及相关特性[J]. Chin. J. Semicond., 2005, 26(3): 532.

Export: BibTex EndNote

Abstract

Abstract

通过实验成功得到了0.1μｍ槽栅结构CMOS器件，验证了理论结果的正确性，表明这是一种优良的小尺寸器件结构．该槽栅器件具有阈值电压漂移较小及较好抑制短沟道效应的特点，并分析了目前器件驱动电流较小的原因及解决办法．

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