| Citation: |
Zhu Yanyan, Xu Run, Chen Sheng, Fang Zebo, Xue Fei, Fan Yongliang, Jiang Zuimin. Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si[J]. Journal of Semiconductors, 2006, In Press.
Zhu Y Y, Xu R, Chen S, Fang Z B, Xue F, Fan Y L, Jiang Z M. Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si[J]. Chin. J. Semicond., 2006, 27(13): 411.
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Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si
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Abstract
The epitaxial growth of Er2O3 films is achieved on Si(001) and Si (111) substrates by MBE at the growth temperature of 700℃ in an oxygen pressure of 0.93mPa.The crystalline structure and orientation of the as-deposited films are strongly dependent on the growth temperature and oxygen pressure.Silicide is formed in the films grown at the lower temperature and lower oxygen pressure.In addition,the oxide phase in the films grown at the lower temperature is polycrystalline.The valence band offset and the conduction band offset between the epitaxial Er2O3 film and the Si substrate are also obtained based on X-ray photoelectron spectroscopy measurements.-
Keywords:
- Er2O3,
- heterojunction,
- crystal growth
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References
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Proportional views
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