Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 322-325

Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition

Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping and Gu Xiuquan

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Abstract: p-type ZnOthin films are realized by pulsed laser deposition using a Li-N dual·acceptor doping method.The lowest resistivity is found to be 3.99.Ω·cm with a Hall mobility of 0.17cm2/(V·s)and a hole concentration of 9.12×10^18 cm-3. The emissions associated with Li and N acceptor states are revealed by low temperature photolumineseence spectra,and the aeceptor energy thus determined is~120 and~222meV。respectively.The ZnO-based p-n homojunction(p-ZnO:(Li,N)/nZnO)exhibits a typical rectification behavior.

Key words: Li-N dual·acceptor dopingp-type ZnOpulsed laser deposition

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping, Gu Xiuquan. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Journal of Semiconductors, 2007, In Press. Zhang Y Z, Ye Z Z, L J, He H P, Gu X Q. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Chin. J. Semicond., 2007, 28(S1): 322.Export: BibTex EndNote
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      Zhang Yinzhu, Ye Zhizhen, Lü Jianguo, He Haiping, Gu Xiuquan. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Journal of Semiconductors, 2007, In Press.

      Zhang Y Z, Ye Z Z, L J, He H P, Gu X Q. Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition[J]. Chin. J. Semicond., 2007, 28(S1): 322.
      Export: BibTex EndNote

      Preparation and Characterization of p-Type ZnO Using Li··N Dual·-Acceptor Doping Method by Pulsed Laser Deposition

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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