Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1018-1023
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一种能够抑制部分耗尽SOI nMOSFET浮体效应的新型Schottkty体接触结构的模拟(英文)

刘运龙 , 刘新宇 , 韩郑生 , 海潮和 and 钱鹤

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Key words: 绝缘体上的硅, nMOS场效应晶体管, 浮体效应, 体接触

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1018-1023
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      • Received Date: 2015-08-19

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