| Citation: |
Yang Weifeng, Yang Keqin, Chen Xiaping, Zhang Feng, Wang Liangjun, Wu Zhengyun. Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier[J]. Journal of Semiconductors, 2005, In Press.
Yang W F, Yang K Q, Chen X P, Zhang F, Wang L J, Wu Z. Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier[J]. Chin. J. Semicond., 2005, 26(13): 277.
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Anealing Effect on Cu/ Ni/4H-SiC Schottky Barrier
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Abstract
Schottky barriers are formed by magnetron sputtering the metals (Cu and Ni) on the front side of 4H-SiC(Si face) to study the rectifying characteristics of the contacts between the metals and 4H-SiC.The effects on the annealing under different temperatures are also investigated.Schottky barrier height (SBH) and ideal factor of metal/4H-SiC are evaluated from the I-V and C-V measurements.After annealing,the SBH of Cu/SiC and Ni/SiC increased.But when the annealing temperature is higher than 500℃ for Cu/SiC,700℃ for Ni/SiC,the rectifying characteristic of samples degrades.The reverse leaky current is low whether or not annealing.No strong Fermi pining is found and the interfaces between metal and 4H-SiC are in good quality.-
Keywords:
- 4H-SiC,
- Schottky barrier height,
- annealing
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References
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Proportional views
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