| Citation: |
Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng, Wu Huizhen. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. Journal of Semiconductors, 2008, In Press.
Liu C, Cao C F, Lao Y F, Cao M, Wu H Z. Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics[J]. J. Semicond., 2008, 29(4): 765.
Export: BibTex EndNote
|
Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics
-
Abstract
1.3μm surface-emitting electroluminescence (EL) device structures are fabricated.The electrically confined apertures are formed by ion implantation and thermal annealing technology.By studying electrical and optical characteristics of the device structure,we found that the optimized thermal annealing temperature is 450℃ when the ion implantation dose is 5E14cm-2.The resistance of the device structure linearly increases with the decrease of aperture diameters.EL spectra intensities are remarkably enhanced after the electrically confined aperture is formed.For instance,the intensity of the sample with 15μm aperture is 4 times that without aperture.Finally,the effects of the electrically confined aperture on the EL spectra of the structure are physically explained. -
References
-
Proportional views
DownLoad: