| Citation: |
Chen Baogin, Ren Liming, Liu Ming, Wang Yunxiang, Long Shibing, Lu Jing, Li Ling. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Journal of Semiconductors, 2003, In Press.
Chen B, Ren L M, Liu M, Wang Y X, Long S B, Lu J, Li L. Proximity Effect Correction Technique in Electron-Beam Direct Writing[J]. Chin. J. Semicond., 2003, 24(S1): 221.
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Proximity Effect Correction Technique in Electron-Beam Direct Writing
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Abstract
The electron scattering processes are simulated by Monte Carlo method. The production mechanism of proximity effect and effective approaches of proximity effect correction are inVestigated. The experimental results show that proximity effect is a comprehensive phenomenon. It can be reduced and expectant purpose of proximity effect correction can be achieved through optimizing processes.-
Keywords:
- nanometer features
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References
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Proportional views
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