| Citation: |
Zhang Jianqiang, Liu Caichi, Zhou Qigang, Wang Jing, Hao Qiuyan, Sun Shilong, Zhao Liwei, Teng Xiaoyun. Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si[J]. Journal of Semiconductors, 2006, In Press.
Zhang J Q, Liu C C, Zhou Q G, Wang J, Hao Q Y, Sun S L, Zhao L W, Teng X Y. Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si[J]. Chin. J. Semicond., 2006, 27(1): 73.
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Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si
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Abstract
The relationship between flow pattern defects (FPDs) and the magic denuded zone (MDZ) in CZ silicon wafers is investigated after pre-RTA in different atmospheres.After pre-RTA at high temperature,the wafers are annealed at 800℃(4h)+1000℃(16h) to form an MDZ.After annealing in an Ar or N2/O2(9%) mixed atmosphere,the wafers exhibit low FPD density,high oxygen precipitation density,and a wide denuded zone.In the case of an N2/O2 mixed atmosphere,the FPD density and the oxygen precipitation density decrease with the increase of O2 content.Therefore the FPD density and oxygen precipitation density can be controlled by adjusting the N2/O2 ratio in the atmosphere-
Keywords:
- CZSi,
- void defects,
- flow pattern defects(FPDs),
- RTA,
- MDZ
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References
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Proportional views
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