Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution

Zhang Xuhui; Tao Chunlan; Zhang Fujia; Liu Yiyang; Zhang Haoli

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Zhang Xuhui, Tao Chunlan, Zhang Fujia, Liu Yiyang, Zhang Haoli. Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution[J]. Journal of Semiconductors, 2006, In Press. Zhang X H, Tao C L, Zhang F J, Liu Y Y, Zhang H L. Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution[J]. Chin. J. Semicond., 2006, 27(10): 1771.Export: BibTex EndNote

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Zhang Xuhui, Tao Chunlan, Zhang Fujia, Liu Yiyang, Zhang Haoli. Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution[J]. Journal of Semiconductors, 2006, In Press.

Zhang X H, Tao C L, Zhang F J, Liu Y Y, Zhang H L. Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution[J]. Chin. J. Semicond., 2006, 27(10): 1771.

Export: BibTex EndNote

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Zhang X H, Tao C L, Zhang F J, Liu Y Y, Zhang H L. Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution[J]. Chin. J. Semicond., 2006, 27(10): 1771.

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Dissolving Pentacene and Characterizing Pantecene Thin Films Fabricated from the Solution

School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China
School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China
School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China
State Key Laboratory of Applied Organic Chemistry,College of Chemistry and Chemical Engineering,Lanzhou University,Lanzhou 730000,China
State Key Laboratory of Applied Organic Chemistry,College of Chemistry and Chemical Engineering,Lanzhou University,Lanzhou 730000,China

Received Date: 2015-08-18
Accepted Date: 2006-01-10
Revised Date: 2006-06-02
Published Date: 2006-10-12

Abstract

Abstract

This paper reports a method for fabricating pentacene o-dichlorobenzene solution.Uniform and larger-area poly-crystal pentacene thin films are obtained at about 100℃.The thin films formed on Si and SiO2 surfaces are characterized by UV-Vis absorption spectrum,optical microscopy,scanning electron microscopy,atomic force microscopy,and X-ray diffraction spectroscopy.
- pentacene solution,
- thin films,
- UV-Vis,
- AFM,
- SEM,
- XRD

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