| Citation: |
Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou, Gong Haimei. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Journal of Semiconductors, 2007, In Press.
Ji X L, Jiang R L, Zhou J J, Liu B, Xie Z L, Han P, Zhang R, Zheng Y D, Gong H M. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Chin. J. Semicond., 2007, 28(12): 1957.
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An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector
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Abstract
AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed.A 40.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector and the air/GaN interface,serving as the back and front mirror,respectively,form a resonant cavity.In the cavity there is a p-GaN/ i-GaN/ n-Al0.38Ga0.62N structure.The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition.The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias. -
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