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The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

Jie Binbin and Sah Chih-Tang

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Abstract: This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D.C.terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.

Key words: bipolar field-effect transistor theoryMOS field-effect transistorsimultaneous electron and hole surface and volume channelssurface potentialshort channel theorydouble-gate pure-base

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    Received: 18 August 2015 Revised: Online: Published: 01 January 2008

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      Jie Binbin, Sah Chih-Tang. The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2008, In Press. Jie B B, Sah C. The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. J. Semicond., 2008, 29(1): 1.Export: BibTex EndNote
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      Jie Binbin, Sah Chih-Tang. The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2008, In Press.

      Jie B B, Sah C. The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)[J]. J. Semicond., 2008, 29(1): 1.
      Export: BibTex EndNote

      The Bipolar Field-Effect Transistor:III.Short Channel Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

      • Received Date: 2015-08-18

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