Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 392-395

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Direct Bonded SOI Wafers Technology

Huang Chenhung and Chiou Herngde

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Abstract: This paper reports the direct bonded SOI wafers technology.It discusses how the wafer cleanliness and surface flatness result in the voids of bonded SOI wafers.By growing oxide on different layer of bonded wafers,we demonstrate the warpage variation.Dimples on wafers results in the bonding voids,which can be inspected by infrared light.

Key words: bonded wafersSOIvoids

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Huang Chenhung, Chiou Herngde. Direct Bonded SOI Wafers Technology[J]. Journal of Semiconductors, 2006, In Press. Huang C H N, Chiou H. Direct Bonded SOI Wafers Technology[J]. Chin. J. Semicond., 2006, 27(13): 392.Export: BibTex EndNote
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      Huang Chenhung, Chiou Herngde. Direct Bonded SOI Wafers Technology[J]. Journal of Semiconductors, 2006, In Press.

      Huang C H N, Chiou H. Direct Bonded SOI Wafers Technology[J]. Chin. J. Semicond., 2006, 27(13): 392.
      Export: BibTex EndNote

      Direct Bonded SOI Wafers Technology

      • Received Date: 2015-08-20

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