| Citation: |
Xu Mingzhen, Tan Changhua. Current_Voltage Characteristics of n-SiOxNy/n-Si Heterojunction Diode Grown on Silicon[J]. Journal of Semiconductors, 2007, In Press.
Xu M Z, Tan C H. Current_Voltage Characteristics of n-SiOxNy/n-Si Heterojunction Diode Grown on Silicon[J]. Chin. J. Semicond., 2007, 28(S1): 369.
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Current_Voltage Characteristics of n-SiOxNy/n-Si Heterojunction Diode Grown on Silicon
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Abstract
n-SiOx Ny is an n·type wide-gap(Eg= 9eV)semiconductor material with double donor doping which was formed by using voltage and/or temperature stressing on insulation SiOxNy thin film and the insulator becomes semi-conductor when donor-like defect density reaches to 1.26 x 10^20 cm-3 and double donor-like energy levels coexist in n·SiOxNy. The currentvoltage characteristics can be described satisfactorily in terms of Fowler-Nordheim(F·N)tunneling current mechanism over the voltage range of much greater than 1V，and the barrier height decreases with increasing doping concentration. -
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