Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 862-866

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Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, Ma Hongzhi, Zhang Enxia, Zhang Zhengxuan and Wang Xi

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Abstract: In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separation by implanted oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2e15 and 3e15cm-2,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2e15cm-2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a totaldose irradiation of 5e4rad(Si),whereas the nitrogen-implanted 3e15cm-2 BOX has a lower hardness than the control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing totaldose of irradiation (from 5e4 to 5e5rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metalsiliconBOXsilicon(MSOS) structure is observed and explained.

Key words: SIMOXburied oxideradiationhardnessnitrogen implantation

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    Received: 18 August 2015 Revised: Online: Published: 01 May 2005

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      Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, Ma Hongzhi, Zhang Enxia, Zhang Zhengxuan, Wang Xi. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. Journal of Semiconductors, 2005, In Press. Zheng Z S, Liu Z L, Zhang G Q, Li N, Li G H, Ma H Z, Zhang E X, Zhang Z X, Wang X. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. Chin. J. Semicond., 2005, 26(5): 862.Export: BibTex EndNote
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      Zheng Zhongshan, Liu Zhongli, Zhang Guoqiang, Li Ning, Li Guohua, Ma Hongzhi, Zhang Enxia, Zhang Zhengxuan, Wang Xi. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. Journal of Semiconductors, 2005, In Press.

      Zheng Z S, Liu Z L, Zhang G Q, Li N, Li G H, Ma H Z, Zhang E X, Zhang Z X, Wang X. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. Chin. J. Semicond., 2005, 26(5): 862.
      Export: BibTex EndNote

      Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

      • Received Date: 2015-08-18

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