| Citation: |
Ren Chunjiang, Chen Tangsheng, Bai Song, Xu Xiaole, Jiao Gang, Chen Chen. Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC Substrate[J]. Journal of Semiconductors, 2008, In Press.
Ren C J, Chen T S, Bai S, Xu X L, Jiao G, Chen C. Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC Substrate[J]. J. Semicond., 2008, 29(12): 2408.
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Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC Substrate
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Abstract
AlGaN/GaN HEMTs on SiC substrate were fabricated and through-wafer via holes up to 50μm deep were etched by inductively coupled plasma (ICP).The SiC substrate was thinned to 50μm,and 3μm thick Ni mask with openings was patterned followed by SF6/O2 gas mixture etching of SiC substrate.Through-wafer via holes with a slightly sloped via sidewall to facilitate subsequent metal coverage to complete the front-to-back electrical connection were finished by Cl2/BCl3 gas mixture based ICP etching of AlGaN/GaN heterostructure.The method exhibited is suitable for AlGaN/GaN HEMTs and MMICs fabrication. -
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