Plasma-Induced Damage on 90nm-Technology MOSFETs

Tang Yu; Hao Yue; Meng Zhiqin; Ma Xiaohua

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Article Navigation > Journal of Semiconductors > 2007 > 28(1): 92-95

Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, In Press. Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.Export: BibTex EndNote

Citation:

Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, In Press.

Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.

Export: BibTex EndNote

Citation:

Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, In Press.

Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.

Export: BibTex EndNote

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Plasma-Induced Damage on 90nm-Technology MOSFETs

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China
Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China

Received Date: 2015-08-18
Accepted Date: 2006-08-16
Revised Date: 2006-09-07
Published Date: 2006-12-26

Abstract

Abstract

Plasma-induced damage on 90nm Cu dual Damascene technology devices is investigated.Experiments on the hot carrier stress for nMOSFETs and NBTI stress for pMOSFETs are conducted.The antenna ratio is still a standard for detecting plasma-induced damage.The via structure shows more plasma damage than other metal structures.This is explained by the via first dual Damascene process.
- plasma-induced damage,
- antenna structure,
- via,
- Cu dual Damascene technology

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