| Citation: |
Xu Yun, Li Yuzhang, Song Guofeng, Gan Qiaoqiang, Yang Guohua, Cao Yulian, Cao Qing, Guo Liang, Chen Lianghui. Leakage Current Analysis of High Power AlGaInP Lasers[J]. Journal of Semiconductors, 2006, In Press.
Xu Y, Li Y Z, Song G F, Gan Q Q, Yang G H, Cao Y L, Cao Q, Guo L, Chen L H. Leakage Current Analysis of High Power AlGaInP Lasers[J]. Chin. J. Semicond., 2006, 27(13): 299.
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Leakage Current Analysis of High Power AlGaInP Lasers
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Abstract
In AlGaInP/GaInP multi-quantum well(MQW) lasers,the injected electrons will surmount the potential barrier between the active layer’s quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition,resulting in the leakage current,which seriously deteriorate the output parameters of laser diodes.In this letter,the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature,and was compared with theoretical simulation results.Consequently,the influence of the p-cladding layer’s concentration on the effective potential height was discussed. -
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