| Citation: |
Yu Jinyong, Yan Beiping, Su Shubing, Liu Xunchun, Wang Runmei, Xu Anhuai, Qi Ming, Liu Xinyu. A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor[J]. Journal of Semiconductors, 2006, In Press.
Yu J Y, Yan B P, Su S B, Liu X C, Wang R M, Xu A H, Qi M, Liu X Y. A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor[J]. Chin. J. Semicond., 2006, 27(10): 1732.
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A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor
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Abstract
An emitter self-aligned InP-based single heterojunction bipolar transistor with a cutoff frequency (fT) of 162GHz is reported.The emitter size is 0.8μm×12μm,the maximum DC gain is 120,the offset voltage is 0.10V,and the typical breakdown voltage at IC=0.1μA is 3.8V.This device is suitable for high-speed low-power applications,such as OEIC receivers and analog-to-digital converters.-
Keywords:
- InP,
- HBT,
- self-aligned
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