Optimization Design for Trench Drift Region Structure in RF Power LDMOS

Wang Yiming; Li Zehong; Wang Xiaosong; Zhai Xiangkun; Zhang Bo; Li Zhaoji

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Article Navigation > Journal of Semiconductors > 2006 > 27(8): 1441-1446

Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Journal of Semiconductors, 2006, In Press. Wang Y M, Li Z H, Wang X S, Zhai X K, Zhang B, Li Z J. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chin. J. Semicond., 2006, 27(8): 1441.Export: BibTex EndNote

Citation:

Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Journal of Semiconductors, 2006, In Press.

Wang Y M, Li Z H, Wang X S, Zhai X K, Zhang B, Li Z J. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chin. J. Semicond., 2006, 27(8): 1441.

Export: BibTex EndNote

Citation:

Wang Yiming, Li Zehong, Wang Xiaosong, Zhai Xiangkun, Zhang Bo, Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Journal of Semiconductors, 2006, In Press.

Wang Y M, Li Z H, Wang X S, Zhai X K, Zhang B, Li Z J. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chin. J. Semicond., 2006, 27(8): 1441.

Export: BibTex EndNote

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Optimization Design for Trench Drift Region Structure in RF Power LDMOS

College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610054,China
College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610055,China
College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610056,China
College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610057,China
College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610058,China
College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610059,China

Received Date: 2015-08-20

Abstract

Abstract

A RF power LDMOS with a trench drift region is optimally designed. Rectangular,converse triangular,and triangular trench structures are proposed based on its frequency characteristic,and the position the depth,and the width of the trench are analyzed.Under the same condition of breakdown voltage and on-resistance,the optimized trench structure is triangular,which can decrease the feedback capacitance by 24% and increase the cut-off frequency by 15%.
- RF power LDMOS,
- trench structure,
- parasitic feedback capacitance,
- cut-off frequency

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