Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 229-234

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Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Ou Guping, Song Zhen, Gui Wenming and Zhang Fujia

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Abstract: The electronic states of the surface and interface of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin film are investigated using X-ray photoelectron spectroscopy (XPS).Atomic force microscopy (AFM) is also applied to investigate the pattern of PTCDA/ITO film.XPS results show that there are two main peaks,which are associated with C atoms in the perylene rings and acid anhydride groups,located at 284.6 and 288.7eV,respectively,in the C1s spectrum of the original surface.It can be deduced from the emergence of a small peak at 290.4eV in the C1s spectrum that some C atoms are oxidized by O atoms from ITO.The binding energies of O atoms in CO bonds and COC bonds are 531.5 and 533.4eV respectively.At the interface,the peak at the high binding energy in the C1s spectrum disappears,and the peak value shifts about 0.2eV to lower binding energy.There is a significant 1.5eV chemical shift to lower binding energy in the O1s spectrum.These observations indicate that perylene rings inside PTCDA molecules are combined with In vacancies in the ITO at the interface.The AFM results show that PTCDA molecules formed an island-like structure a height of about 14nm.The sizes of the crystal grains are about 100~300nm.The island-like pattern comes from the delocalized π bonds of adjacent molecules in PTCDA and the combination of vacancies in ITO with perylene rings at the PTCDA/ITO interface.

Key words: AFMXPSPTCDA

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Journal of Semiconductors, 2006, In Press. Ou G P, Song Z, Gui W M, Zhang F J. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Chin. J. Semicond., 2006, 27(2): 229.Export: BibTex EndNote
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      Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Journal of Semiconductors, 2006, In Press.

      Ou G P, Song Z, Gui W M, Zhang F J. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Chin. J. Semicond., 2006, 27(2): 229.
      Export: BibTex EndNote

      Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

      • Received Date: 2015-08-20

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