| Citation: |
Zhan Da, Ma Xiaobo, Liu Weili, Song Zhitang, Feng Songlin. Fabrication of SOI Material Using Low Temperature Bonding Technology[J]. Journal of Semiconductors, 2006, In Press.
Zhan D, Ma X B, Liu W L, Song Z T, Feng S L. Fabrication of SOI Material Using Low Temperature Bonding Technology[J]. Chin. J. Semicond., 2006, 27(13): 189.
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Fabrication of SOI Material Using Low Temperature Bonding Technology
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Abstract
Nitrogen plasma activation is used before the bonding of the silicon and silicon oxide wafers,and the relationship between the bonding strength and annealing temperature is investigated.The results show that the bonding strength increases dramatically with the increase of annealing temperature when the temperature is below 300℃;above 300℃,the increase tendency becomes unconspicuous.SOI materials are obtained by Smart-Cut technology with nitrogen plasma activation.The characterization results show that the defect density in SOI top layer is low enough after being annealed at 500℃-
Keywords:
- SOI,
- plasma activation,
- bonding strength
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References
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Proportional views
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