J. Semicond. > 2008, Volume 29 > Issue 5 > 883-888

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Optimization and Application of SRAM in 90nm CMOS Technology

Zhou Qingjun and Liu Hongxia

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Abstract: This paper presents an optimized SRAM that is repairable and dissipates less power.To improve the yield of SRAMs per wafer,redundancy logic and an E-FUSE box are added to the SRAM and an SR SRAM is set up.In order to reduce power dissipation,power on/off states and isolation logic are introduced into the SR SRAM and an LPSR SRAM is constructed.The optimized LPSR SRAM64K×32 is used in SoC and the testing method of the LPSR SRAM64K×32 is also discussed.The SoC design is successfully implemented in the Chartered 90nm CMOS process.The SoC chip occupies 56mm×56mm of die area and the power dissipation is 1997mW.The test results indicate that LPSR SRAM64K×32 obtains 17301% power savings and the yield of the LPSR SRAM64K×32s per wafer is improved by 13255%.

Key words: optimizationLPSR SRAMredundancy logicpower on/off states

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    Received: 18 August 2015 Revised: 08 January 2008 Online: Published: 01 May 2008

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      Zhou Qingjun, Liu Hongxia. Optimization and Application of SRAM in 90nm CMOS Technology[J]. Journal of Semiconductors, 2008, In Press. Zhou Q J, Liu H X. Optimization and Application of SRAM in 90nm CMOS Technology[J]. J. Semicond., 2008, 29(5): 883.Export: BibTex EndNote
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      Zhou Qingjun, Liu Hongxia. Optimization and Application of SRAM in 90nm CMOS Technology[J]. Journal of Semiconductors, 2008, In Press.

      Zhou Q J, Liu H X. Optimization and Application of SRAM in 90nm CMOS Technology[J]. J. Semicond., 2008, 29(5): 883.
      Export: BibTex EndNote

      Optimization and Application of SRAM in 90nm CMOS Technology

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-27
      • Revised Date: 2008-01-08
      • Published Date: 2008-05-05

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