Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 252-255

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30GHz PHEMT Oscillator

Wu Ahui

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Abstract: This paper describes the design, fabrication and performance of a monolithic 30GHz VCO.This MMIC chip utilizes the PHEMT technology.A negative resistance common-source feedback configuration is utilized in the design.The modified-Materka FET model parameters are extracted from the small signal S-parameters and dc I-V parameters.The varactor diode is implemented by common-source-drain-FET.The capacitance is controlled by the gate voltage.The circuit measurements show a frequency tuning bandwidth of about 150MHz at ~30.12GHz center frequency and an output power up to 12.5dBm.The measurements are corresponding with the design.

Key words: VCO PHEMT MATRK-model harmonic-balance-analysis

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Wu Ahui. 30GHz PHEMT Oscillator[J]. Journal of Semiconductors, 2005, In Press. Wu A H. 30GHz PHEMT Oscillator[J]. Chin. J. Semicond., 2005, 26(13): 252.Export: BibTex EndNote
      Citation:
      Wu Ahui. 30GHz PHEMT Oscillator[J]. Journal of Semiconductors, 2005, In Press.

      Wu A H. 30GHz PHEMT Oscillator[J]. Chin. J. Semicond., 2005, 26(13): 252.
      Export: BibTex EndNote

      30GHz PHEMT Oscillator

      • Received Date: 2015-08-19

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