Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 267-270

Growth and Characterization of Zn Doped SnO2 Nanowires

Meng Hui and Wang Cong

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Abstract: Zn doped SnOz(ZSO)nanowires were fabricated on Si substrates by chemical vapor deposition (CVD) on a large scale at 770。C.The ZSO nanowires had diameters in the range of 30~100nm and lengths of several tens of micrometers. They were characterized by means of X-ray powder diffractio n(XRD),field-emission scanning electron microscopy(FESEM)一energy·dispersive X-ray (EDX) analysis,transmission electron microscopy (TEM),and X·ray photoelectron spectroscopy(xPs).

Key words: SnO2 nanowireschemical vapor depositionZn doped

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Meng Hui, Wang Cong. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Journal of Semiconductors, 2007, In Press. Meng H, Wang C. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Chin. J. Semicond., 2007, 28(S1): 267.Export: BibTex EndNote
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      Meng Hui, Wang Cong. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Journal of Semiconductors, 2007, In Press.

      Meng H, Wang C. Growth and Characterization of Zn Doped SnO2 Nanowires[J]. Chin. J. Semicond., 2007, 28(S1): 267.
      Export: BibTex EndNote

      Growth and Characterization of Zn Doped SnO2 Nanowires

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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