Abstract: A novel AlGaInP thin-film light emitting diode (LED) with an omni directional reflector structure is proposed and the corresponding fabrication process is developed.The omni-directional reflector was realized by the combination of a GaAs epi-wafer,SiO2 with conductive micro-contacts,and Au.The LED structure and Si substrate carrier were then brought into contact using silver-loaded epoxy.Then,the GaAs substrate was removed and stopped on the etching stop layer.After the etching stop layer was removed,a thin AuGeNi electrode,the roughed surface,an ITO current spreading layer,a thick AuGeNi n-electrode,a AuZnAu p-electrode,and alloy were fabricated.The wafer was cut into 300μm×300μm chips and then packaged into TO-18 without epoxy resin.For 20mA driving current,the voltage is 2.2V,and light intensity and light power respectively reach 195mcd and 3.78mW,which is 3.6 times higher than the absorbing-substrate LEDs.

Key words: AlGaInP, thin-film light-emitting diode, omni-directional reflector