Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2309-2314

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A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

Ding Ying, Wang Wei, Kan Qiang, Wang Baojun and Zhou Fan

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Abstract: A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE).At a 150mA injection current,the full width at half maximum of the emission spectrum of the SLD is about 72nm,ranging from 1602 to 1674nm.The emission spectrum is smooth and flat.The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm.An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature.This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Key words: broadband superluminescent diodesgraded compositionburied hetero-structure

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Ding Ying, Wang Wei, Kan Qiang, Wang Baojun, Zhou Fan. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Journal of Semiconductors, 2005, In Press. Ding Y, Wang W, Kan Q, Wang B J, Zhou F. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Chin. J. Semicond., 2005, 26(12): 2309.Export: BibTex EndNote
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      Ding Ying, Wang Wei, Kan Qiang, Wang Baojun, Zhou Fan. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Journal of Semiconductors, 2005, In Press.

      Ding Y, Wang W, Kan Q, Wang B J, Zhou F. A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs[J]. Chin. J. Semicond., 2005, 26(12): 2309.
      Export: BibTex EndNote

      A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

      • Received Date: 2015-08-19

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